1n5223b through 1n5258b silicon epitaxial planar zener diodes for voltage regulation ade-208-137 (z) preliminary, rev. 0 aug. 1993 features glass package do-35 structure ensures high reliability. wide spectrum from 2.7v through 36v of zener voltage provide flexible application. ordering information type no. mark package code 1n5223b through 1n5258b type no. do-35 outline 1. cathode
2. anode cathode band type no. 1 2
1n5223b through 1n5258b 2 absolute maximum ratings (ta = 25 c) item symbol value unit power dissipation pd* 1 500 mw surge power dissipation pd(surge)* 2 10 w lead temperature t l * 3 230 c junction temperature tj 200 c storage temperature tstg C65 to +200 c notes: 1. t l = 75 c, lead length = 3/8" (derate 4.0mw/ c above 75 c). 2. non-recurrent square wave, pw = 8.3ms, tj = 55 c, tj is prior to surge. 3. less than 1/16" from the case for 10 seconds. electrical characteristics (ta = 25 c) v z (v)* i r ( m a) z zt ( w )z zk ( w ) test condition test condition test condition test condition i z (ma) max v r (v) max i zt (ma) max i zk (ma) 1n5223b 2.7 5 (%) 20 75 1.0 30 20 1300 0.25 1n5224b 2.8 5 (%) 20 75 1.0 30 20 1400 0.25 1n5225b 3.0 5 (%) 20 50 1.0 29 20 1600 0.25 1n5226b 3.3 5 (%) 20 25 1.0 28 20 1600 0.25 1n5227b 3.6 5 (%) 20 15 1.0 24 20 1700 0.25 1n5228b 3.9 5 (%) 20 10 1.0 23 20 1900 0.25 1n5229b 4.3 5 (%) 20 5 1.0 22 20 2000 0.25 1n5230b 4.7 5 (%) 20 5 2.0 19 20 1900 0.25 1n5231b 5.1 5 (%) 20 5 2.0 17 20 1600 0.25 1n5232b 5.6 5 (%) 20 5 3.0 11 20 1600 0.25 1n5233b 6.0 5 (%) 20 5 3.5 7 20 1600 0.25 1n5234b 6.2 5 (%) 20 5 4.0 7 20 1000 0.25 1n5235b 6.8 5 (%) 20 3 5.0 5 20 750 0.25 1n5236b 7.5 5 (%) 20 3 6.0 6 20 500 0.25 1n5237b 8.2 5 (%) 20 3 6.5 8 20 500 0.25 1n5238b 8.7 5 (%) 20 3 6.5 8 20 600 0.25 1n5239b 9.1 5 (%) 20 3 7.5 10 20 600 0.25 1n5240b 10 5 (%) 20 3 8.0 17 20 600 0.25 1n5241b 11 5 (%) 20 2 8.4 22 20 600 0.25 note: tested with dc.
1n5223b through 1n5258b 3 electrical characteristics (ta = 25 c) (cont) v z (v)* i r ( m a) z zt ( w )z zk ( w ) test condition test condition test condition test condition i z (ma) max v r (v) max i zt (ma) max i zk (ma) 1n5241b 11 5 (%) 20 2 8.4 22 20 600 0.25 1n5242b 12 5 (%) 20 1 9.1 30 20 600 0.25 1N5243B 13 5 (%) 9.5 0.5 9.9 13 9.5 600 0.25 1n5244b 14 5 (%) 9.0 0.1 10 15 9.0 600 0.25 1n5245b 15 5 (%) 8.5 0.1 11 16 8.5 600 0.25 1n5246b 16 5 (%) 7.8 0.1 12 17 7.8 600 0.25 1n5247b 17 5 (%) 7.4 0.1 13 19 7.4 600 0.25 1n5248b 18 5 (%) 7.0 0.1 14 21 7.0 600 0.25 1n5249b 19 5 (%) 6.6 0.1 14 23 6.6 600 0.25 1n5250b 20 5 (%) 6.2 0.1 15 25 6.2 600 0.25 1n5251b 22 5 (%) 5.6 0.1 17 29 5.6 600 0.25 1n5252b 24 5 (%) 5.2 0.1 18 33 5.2 600 0.25 1n5253b 25 5 (%) 5.0 0.1 19 35 5.0 600 0.25 1n5254b 27 5 (%) 4.6 0.1 21 41 4.6 600 0.25 1n5255b 28 5 (%) 4.5 0.1 21 44 4.5 600 0.25 1n5256b 30 5 (%) 4.2 0.1 23 49 4.2 600 0.25 1n5257b 33 5 (%) 3.8 0.1 25 58 3.8 700 0.25 1n5258b 36 5 (%) 3.4 0.1 27 70 3.4 700 0.25 note: tested with dc.
1n5223b through 1n5258b 4 zener current vs. zener voltage 25 20 15 10 5 0 4 8 12 16 20 zener current i z (ma) zener voltage v z (v) 24 28 32 40 36 1n5223b 1n5225b 1n5227b 1n5229b 1n5231b 1n5233b 1n5235b 1n5237b 1n5239b 1n5240b 1n5241b 1n5242b 1N5243B 1n5244b 1n5245b 1n5258b 1n5257b 1n5256b 1n5254b 1n5255b 1n5253b 1n5252b 1n5251b 1n5250b 1n5246b 1n5247b 1n5248b 1n5249b power dissipation vs. ambient temperature 500 400 300 200 100 200 150 100 50 0 ambient temperature ta ( c) power dissipation p (mw) d 0 2.5mm 3mm printed circuit board 100 180 1.6t mm material: paper phenol 5mm
1n5223b through 1n5258b 5 package dimensions 26.0 min 4.2 max 26.0 min 0.5 2.0 max f f 1n 5223 cathode band (black) type no. (black) 12 1n 5223 b abbreviation of type name 1n5223b expanded drawing of marking hitachi code jedec code eiaj code weight (g) do-35 do-35 sc-48 0.13 1 2 cathode anode unit: mm
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